Magnetoresistance effect element and magnetic head

ABSTRACT

A magnetoresistance effect element has a lamination structure comprising a free layer including two ferromagnetic layers, a pinned layer including two ferromagnetic layers, and at least one nano-contact portion composed of a single ferromagnetic layer and disposed at least one portion between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a magnetoresistance effect elementparticularly provided with Ballistic Magneto Resistance (BMR) effect andalso relates to a magnetic head provided with such magnetoresistanceeffect element.

2. Relevant Art

Generally, a giant magnetoresistance effect (GMR effect) is a phenomenonindicating rate of change in magnetoresistance (called hereinmagnetoresistance ratio) which is developed or reviled in a case thatelectric current passes in a plane of a lamination structure offerromagnetic layer/non-magnetic layer/ferromagnetic layer. Moreover,the magnetoresistance effect element, of such GMR has been furtheractively studied for the development, of more large magneto-resistanceratio, and up to now, ferromagnetic tunnel junction and a CPP (CurrentPerpendicular to Plane)-type MR element, in which the current passesperpendicularly with respect to the lamination structure, have beendeveloped, and hence, has high degree of expectation for reproducing(regenerative) element for magnetic sensor, magnetic recording elementand the like.

In the field of the magnetic recording technology, according toimprovement, of recording density, there is a continuous progress formaking smaller recording bits, and as its result, it becomes difficultto obtain a sufficient signal strength. Thus, taking such matters intoconsideration, it has been desired for engineers in this field to searcha material having high sensitive magnetoresistance effect and develop orrevile an element indicating a large magnetoresistance ratio.

Recently, there has been reported, as material indicatingmagnetoresistance effect of more than 100%, “magnetic micro contact”which is formed by connecting two needle-like nickel (Ni) as shown, forexample, in a document of “Physical Review Letters, vol. 82, p. 2923(1999), by N. Garcia, M. Munoz, and Y. W. Zhao” (Document 1). Thismagnetic micro contact is manufactured by butting two ferromagneticmaterials worked in form of needle or in form of triangle. Morerecently, there has been development of magnetic micro contact in whichtwo fine Ni wires are arranged in T-shape and micro column is grown at acontact portion of these wires by electro-deposition method (forexample, refer to a document of “Appl. Phys. Lett., Vol. 80, p. 1785(2002), by N. Garcia, G. G. Qian, and I. G. Sveliev” (Document 2).

It is considered that an extremely high MR (Magneto Resistance) ratiodeveloping such element is based on spin transport of a magnetic areaexisting in the magnetic micro contact formed between two ferromagneticlayers having magnetized directions in anti-parallel to each other. Itis considered that, in the magnetoresistance effect element utilizingthe magnetic micro contact having such characteristics, since electronspass without receiving any scattering or diffusion due to impurities(i.e., pass ballistically), such magnetoresistance effect element iscalled BMR element (Ballistic Magneto Resistance element).

In addition, more recently, a magnetoresistance effect element havingsuch magnetic micro contact has also been reported. For example, inJapanese Patent. Laid-open (KOKAI) Publication No. 2003-204095 (Document3), there is reported a magnetoresistance effect element composed offirst ferromagnetic layer/insulating layer/second ferromagnetic layer,in which the first ferromagnetic layer is connected to the secondferromagnetic layer at a predetermined portion of the insulating layer,the magnetoresistance effect element being provided with a hole havingan opening with a diameter of less than 20 nm. Furthermore, in JapanesePatent Application National Publication (Laid-open) No. HEI 11-510911(Document 4), there has been reported a magneto-resistance effectelement composed of two magnetic layers connected to each other througha narrow segment having a width of about 100 nm.

However, in consideration of application of a BMR element to a magnetichead, a dimension of a free layer sensitive to magnetic field leakingfrom a surface of a medium is made small such as, for example, toseveral tens nm. For example, in a case of recording density of 1Tbits/in², such dimension is of 40 to 50 nm, and in a case of a BMRelement capable of realizing an extremely high MR ratio, a structure ofa magnetic domain of the magnetic micro contact (called hereinlater“nano-contact portion”) is a “key” of the BMR effect. As theminiaturization progresses, strong GEN magnetic field is generated fromthe end face of the thin free layer and thermal stability is extremelylowered, thus providing inconvenience. Therefore, in the BMR element, itis an extremely important object to ensure the magnetic domain controland magnetic stability thereof.

SUMMARY OF THE INVENTION

An object of the present invention is to substantially eliminate defectsor drawbacks encountered in the prior art mentioned above and to providea magnetoresistance effect element, particularly for a magnetic head,having BMR effect capable of achieving improved stability andsensitivity of a free layer and a magnetic domain of a nano-contactportion constituting the magnetoresistance effect element.

Another object of the present invention is to also provide a magnetichead provided with such magnetoresistance effect element.

These and other objects can be achieved according to the presentinvention, by providing, in one aspect, a magneto-resistance effectelement comprising:

-   -   a free layer including at least two ferromagnetic layers;    -   a pinned layer including at least two ferromagnetic layers; and        at least one nano-contact portion composed of a single        ferromagnetic layer and disposed, at least one portion, between        the free layer and the pinned layer, wherein a distance between        the free layer and the pinned layer is not more than Fermi        length.

In this aspect, the distance between the free layer and the pinned layeris preferably of not more than 100 nm, and more preferably, of not morethan mean free path specific for a material constituting thenano-contact portion, being not more than 15 nm.

The nano-contact portion may have a lateral width, extending in adirection normal to a direction to the distance between the free layerand the pinned layer, preferably of not more than 100 nm, and thelateral width is more preferably of not more than mean free pathspecific for a material constituting the nano-contact portion, being notmore than 15 nm.

The free layer may further include a non-magnetic layer disposed betweenthe two ferromagnetic layers of the free layer and the two ferromagneticlayers of the free layer are arranged antiparallel to each other throughthe non-magnetic layer.

The two ferromagnetic layers of the pinned layer are may be formed ofthe same material or materials different from each other.

One of two ferromagnetic layers of the free layer and one of twoferromagnetic layers of the pinned layer, which are opposed to eachother through the nano-contact portion, may be formed of a ferromagneticmaterial having a spin polarization of not less than 0.5. Theferromagnetic material forming one of two ferromagnetic layers of thefree layer and one of two ferromagnetic layers of the pinned layer, aswell as forming the nano-contact portion, may be a material selectedfrom the groups consisting of a ferromagnetic metal group of Co, Fe, Ni,CoFe, NiFe, CoFeNi; a ferromagnetic metalloid group of CrO₂; andferromagnetic oxide of Fe₃O₄.

It is preferred that an angle constituted by a direction ofmagnetization of the ferromagnetic layer of the free layer and adirection of the ferromagnetic layer of the pinned layer is of 90degrees or 180 degrees.

Furthermore, an anti-ferromagnetic layer may be farther disposed on thesurface of the ferromagnetic layer of the pinned layer on the side apartfrom the nano-contact portion.

The two ferromagnetic layers of the free layer provide a ferromagneticcoupling, or the two ferromagnetic layers of the free layer provide ananti-ferromagnetic coupling.

Further, an intermediate layer is further formed between the free layerand the pinned layer, the intermediate layer including the nano-contactportion and a non-magnetic layer formed at a portion other than thenano-contact portion, and the non-magnetic layer is composed of aninsulating material.

The non-magnetic layer of the insulating material may be made of anoxide such as aluminum oxide or silicon oxide or nitride such as siliconnitride.

According to the magnetoresistance effect element of the aspect and itspreferred embodiments mentioned above, since the distance between thefree layer and the pinned layer is defined to be not more than Fermilength, and the free layer and the pinned layer include, respectively,at least two ferromagnetic layers, it can be possible to effectivelydetect signals at high sensitivity due to the BMR effect. In addition,it is also be possible to reduce magnetostatic energy due to itsstructure and to detect generation of the magnetostatic charge at theend surfaces of the layers to thereby ensure the magnetic domain controland the magnetic stability.

In the embodiment in which these two ferromagnetic layers contained inthe free layer are coupled anti-ferromagnetically through thenon-magnetic layer, the magnetization of the two ferromagnetic layers ofthe free layer can be stabilized. As a result, magnetic field does notleak from the side end surfaces of the layers, thereby improving thestability of the entire structure of the element.

In addition, according to the embodiment in which the anti-ferromagneticlayer is formed on the two ferromagnetic layers of the pinned layer,strong switched connection can be induced, and hence, the axis of easymagnetization acting as the pinned layer can be fixed. As a result, themagnetization of the pinned layer can be strongly fixed, so that thestability of the entire structure of the element can be improved.

Furthermore, in the embodiment, in which the two ferromagnetic layers ofthe free layer provide a ferromagnetic coupling, high sensitivity andwide linear motion can be ensured by laminating the layer having a highspin polarization and the layer having a high soft magnetic property. Onthe other hand, in the embodiment in which the two ferromagnetic layersof the free layer provide an anti-ferromagnetic coupling, themagnetostatic energy can be reduced, and accordingly, the improvedfunctions of achieving strength against disturbance and stableoperation.

The above objects can be further achieved by providing, in anotheraspect, a magnetic head comprising:

-   -   a magnetoresistance effect element having a lamination        structure;    -   electrodes disposed on both sides of the lamination structure of        the magnetoresistance effect element; and    -   a pair of shield members disposed on the electrodes,        respectively,    -   the magnetoresistance effect element comprising: a free layer        including at least two ferromagnetic layers; a pinned layer        including at least two ferromagnetic layers; and at least one        nano-contact portion composed of a single ferromagnetic layer        and disposed, at least a portion, between the free layer and the        pinned layer, wherein a distance between the free layer and the        pinned layer is not more than Fermi length.

In this aspect, a pair of permanent magnet layers is further arranged onboth sides of the layer lamination structure of the magnetoresistanceeffect element.

In this aspect, since the magnetoresistance effect element having highstability and sensitivity in its free layer and magnetic domain of thenano-contact portion can be applied to the magnetic head, the stabilityof the magnetic head can be also stabilized.

The nature and further characteristic features of the present inventionwill be made more clear from the following descriptions made withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a sectional view of a magnetoresistance effect elementaccording to one embodiment of the present invention:

FIG. 2 is an illustration of a nano-contact portion, in an enlargedscale, of the magnetoresistance effect element of FIG. 1;

FIGS. 3A and 3B (FIG. 3) are sectional views showing examples of a freelayer constituting the magnetoresistance effect element of FIG. 1;

FIGS. 4A and 4B (FIG. 4) are sectional views illustrating otherembodiments of the magnetoresistance effect element according to thepresent invention;

FIG. 5 is an illustration of a magnetic head as a magnetic reproductionelement using the magnetoresistance effect element according to theembodiment of the present invention; and

FIG. 6 is an illustrated sectional view, in an enlarged scale, ofanother example of the magnetic head according to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of a magnetoresistance effect element and amagnetic head utilizing the same according to the present. inventionwill be described hereunder with reference to the accompanying drawings.

[Magnetoresistance Effect Element]

One embodiment of a magnetoresistance effect, element is first describedwith reference to FIG. 1 showing the sectional view in its layerlamination direction.

Referring to FIG. 1, a magnetoresistance effect element 10 of thepresent invention comprises a free layer 11 including at least twoferromagnetic layers 1, 2, a pinned layer 12 including at least twoferromagnetic layers 5, 6 and at least one (one or more than one)nano-contact portion portions 13, which are composed of oneferromagnetic layer 3, disposed between the free layer 11 and the pinnedlayer 12. That is, as shown in FIG. 1, in the magnetoresistance effect,element 10 of this embodiment, two ferromagnetic layers 2 and 5 aredisposed so as to sandwich one or more than one nano-contact portions 13therebetween, and further in other words, one or more nano-contactportions 13 are arranged between the two ferromagnetic layers 2 and 5.

[Nano-Contact Portion]

The nano-contact portion 13 is formed from a ferromagnetic materialhaving spin polarization of not less than 0.5, and as such ferromagneticmaterial, although various kinds of materials are utilized, thefollowing ones will, for example, be listed up.

Ferromagnetic Metal Group: Co (spin polarization: 0.8); Fe (spinpolarization: 0.5); Ni (spin polarization: 0.8); CoFe (spinpolarization: 0.6 to 0.8); NiFe (spin polarization: 0.6 to 0.8); CoFeNi(spin polarization: 0.6 to 0.8); and so on.

Ferromagnetic Metalloid Group: CrO₂ (spin polarization: 0.9 to 1.0); andso.

Ferromagnetic Oxide: Fe₃O₄ (spin polarization: 0.9 to 1.0); and so.

In the above ferromagnetic materials, the CoFe and NiFe may be morepreferable.

With reference to FIG. 2, showing one nano-contact portion 13, in anenlarged scale section, constituting a portion of the magnetoresistanceeffect element of FIG. 1, a length d1 in the width direction thereof,i.e., a direction normal to the layer lamination direction, is set to beless than the Fermi-length.

The nano-contact portion 13 is constituted so as to have a shape ofcircle, elliptical, rectangular (triangle, square or so) or likesupposing that the magnetoresistance effect element be viewed in a. planview such as shown in FIG. 1. In this meaning, the above length d1 ofthe nano-contact portion 13 will be considered to be equal to themaximum length d1 in the plane in which the nano-contact portion 13exists as viewed in the plan view of the magnetoresistance effectelement 10 such as shown in FIG. 1, and accordingly, in the presentinvention, it will be said that the maximum length d1 of thenano-contact portion 13 is less than the Fermi length.

The Fermi length being of the length d1 of the nano-contact portion 13in its width direction is a value specific to material (specific valueor characteristic value), which is different for every materialconstituting the ferromagnetic material forming the nano-contact portion13. However, many kinds of such ferromagnetic materials have the Fermilength of about 60 nm to 100 nm, so that the words “less than the Fermilength” will be prescribed as “less than 100 nm” or “less than 60 nm”.In fact, Ni has the Fermi length of about 60 nm and that of Co is ofabout 100 nm.

Furthermore, it is more desirable that the length of the nano-contactportion 13 in its width direction is less than a mean free path.Although the value of this mean free path is also a value specific toferromagnetic materials constituting the nano-contact portions, many ofthem reside in a range of about 5 nm to 15 nm. Accordingly, in thismeaning, the word “less than mean free path” will be prescribedsubstantially equivalently as “less than 15 nm” or “less than 5 nm”. Inconcrete examples, NiFe has a mean free path of about 5 nm and that ofCo is of about 12 nm.

Incidentally, a distance between the free layer 11 and the pinned layer12 laminated through the nano-contact portion. 13 is equal to a lengthd2 of the nano-contact portion 13 in the layer lamination direction asviewed in the plane of FIG. 1 or 2. It is also desirable that thislength (distance) d2 is also of less than the Fermi length as like asthe length d1. More specifically, it is desired to be prescribed asbeing less than 100 nm or less than 60 nm, and moreover, it is furtherdesirable for the length d2 to be prescribed to be less than the meanfree path, i.e., less than 15 nm or less than 5 nm as mentioned above.

On the contrary, in a case that the lengths d1 and d2 in the width andlamination directions of the nano-contact portion 13 exceed the Fermilength, the thickness of the magnetic wall of the nano-contact portion13 becomes large in the case that, the magnetization shows ananti-parallel state, and hence, it becomes difficult for electronpassing the nano-contact portion 13 to keep spin information. As aresult, in this meaning too, it is desirable for the preferredembodiment of the present invention that the dimension of thenano-contact portion 13 (d1 and d2) is less than the Fermi length, andespecially, in the viewpoint of well keeping the spin information, it isless than the mean free path.

Further, on the other hand, in the case where the lengths d1 and d2 inthe width and lamination directions of the nano-contact portion 13 areless than the Fermi length, a thin wall section is generated to themagnetic wall section of the nano-contact portion 13. Accordingly,relative relationship in magnetization arrangement between the freelayer 11 and the pinned layer 12, between which the nano-contact portion13 is sandwiched, varies, and hence, electric resistance between thefree layer 11 and the pinned layer 12 will also vary. In the case of themagnetoresistance effect element 10 of the present invention, sincebasically, there exists a magnetic field area, in which the electricresistance is reduced in accordance with the magnetic field even ifmagnetic field applying direction be changed, it will be said that themagnetoresistance effect produced there is the effect which is producedby the magnetic wall formed to the nano-contact portion 13. Herein, themagnetic wall of the nano-contact portion 13 acts as a transition regionor area of two portions (i.e., two ferromagnetic layers 2 and 5sandwiching the nano-contact portion 13) having different magnetizeddirections. Further, according to the present invention, themagnetoresistance effect more than 50% will be produced in accordancewith the magnetized direction and magnitude of the applied magneticfield.

That is, in the magnetoresistance effect element 10 of the presentinvention, the lengths d1 and d2 in the width and lamination directionsof the nano-contact portion 13 disposed between the free layer 11 andthe pinned layer 12 are made to be less than the Fermi length, and inaddition, these free layer 11 and pinned layer 12 are each composed oftwo for at least two) ferromagnetic layers. Accordingly, it becomespossible to detect highly sensitive signals due to the BMR effect, andin addition, the magnetic domain structure control and magnetic,stability can be surely improved by the magnetostatic energy reductionfunction due to the above structure and by the function of suppressingthe generation of the magnetostatic charge appearing the end surface.

Such nano-contact portion 13 can be manufactured with high precision byfine working means such as nano-lithography micro-fabrication. Since themagnetoresistance effect element, of the present invention, providedwith such nano-contact portion 13 indicates a large rate of change inmagnetoresistance (called magnetoresistance ratio), it is consideredthat electrons can ballistically pass through the nano-contact portion13 without any scattering of impurities. Further, the magnetoresistancechanging rate mentioned above means an MR ratio (ΔR/R), which is definedby an electric resistance R at a time of sufficiently large magneticstrength and an electric resistance change ΔR at a time when an appliedmagnetic field is changed.

A portion (or portions) other than the nano-contact portion 13 disposedbetween the two ferromagnetic layers 2 and 5 is composed of (or forms) anon-magnetic layer 4, which is formed of, for example, an oxide such asaluminum oxide or silicon oxide or insulating material such as nitrideof, for example, silicon nitride, The non-magnetic layer 4 has itslength in the lamination direction substantially the same as the lengthd1 in the width direction of the nano-contact portion 13.

In the above meaning, the magnetoresistance effect element 10 of thisembodiment may be said that it comprises the free layer 11, the pinnedlayer 12 and an intermediate layer disposed therebetween and includingone or more nano-contact portions 13 and the non-magnetic layer 14.

[Ferromagnetic Layers]

The ferromagnetic layers 2 and 5 are connected via one or morenano-contact portions 13 disposed therebetween, in which theferromagnetic layer 2 is a layer included in the free layer 11 on thenano-contact portion side and, on the other hand, the ferromagneticlayer 5 is a layer included in the pinned layer 12 on the nano-contactportion side. In the embodiment, of the present, invention, theseferromagnetic layers 2 and 5 are formed of a ferromagnetic materialhaving the spin polarization of not less than 0.5. For this purpose,although various ferromagnetic materials may be utilized, the same oridentical material as or to that for the nano-contact portion 13 will bepreferably utilized. That is, it is desirable to select the materialfrom the following groups of ferromagnetic metal group: Co (spinpolarization: 0.8); Fe (spin polarization: 0.5); Ni (spin polarization:0.8); CoFe (spin polarization: 0.6 to 0.8); NiFe (spin polarization: 0.6to 0.8); CoFeNi (spin polarization: 0.6 to 0.8); Ferromagnetic Oxide:Fe₃O₄ (spin polarization: 0.9 to 1.0); and ferromagnetic metalloidgroup: CrO₂ (spin polarization: 0.9 to 1.0) and so on, in which CoFe orNiFe will be selected as more preferable ferromagnetic material.

In the structure that the nano-contact portion 13 and the ferromagneticlayers 2 and 5 sandwiching the nano-contact portion 13 are formed of thesame ferromagnetic material, the film formation and etching processingcan be made with the same ferromagnetic material and, in addition,granular structural film formation technique can be preferably utilized,thus being advantageous and effective for the manufacturing of themagnetoresistance effect element 10 of the present invention.

[Free Layer]

The free layer 11 is a layer in which magnetization is rotated in one orreverse direction in response to a magnetic field generated from amagnetization transition region (area) of a medium, and it is desired todefine the direction of an axis of easy magnetization (i.e., easy axis)to be parallel to the medium. This free layer 11 is a layer composed oftwo ferromagnetic layers 1, 2, as mentioned before, which are disposedin ferromagnetic coupling state or anti-ferromagnetic coupling state.

With reference to FIG. 3, FIG. 3A represents one example showing theferromagnetic coupling of two ferromagnetic layers 1 a and 2 a and, onthe other hand, FIG. 3B represents one example showing theanti-ferromagnetic coupling of two ferromagnetic layers 1 b and 2 b.

With reference to FIG. 3A, in the case that two ferro-magnetic layers 1a and 2 a of the free layer 11 a provide the ferromagnetic couplingstate, one of the ferromagnetic layers 1 a disposed at a position apartfrom the position of the nano-contact portion 13 is formed from amaterial having a high spin polarization and, on the other hand, theother ferromagnetic layer 2 a disposed adjacent to the nano-contactportion 13 is formed from a soft magnetic material having a smallmagnetostriction. According to such combined arrangement of theferromagnetic layers of different materials, high sensitivity and widelinear motion can be effectively ensured.

As a material having the high polarization, it may be possible toutilize various kinds of ferromagnetic materials having the spinpolarization of not less than 0.5, and the material of CoFe or Co willbe more preferably utilized to form it generally having its thickness ofabout 0.5 to 5 nm. Further, as the soft material having the smallmagnetostriction, Ni or NiFe is specifically preferably utilized to formit generally having its thickness of about 0.5 to 5 nm.

On the other hand, with reference to FIG. 3B, in the case that the twoferromagnetic layers 1 b and 2 b provide the anti-ferromagnetic coupledstate, the non-magnetic layer 9 is formed between these twoferromagnetic layers 1 b and 2 b so as to exhibit antiparallel couplingstate of these ferromagnetic layers 1 b and 2 b through the non-magneticlayer 9. According to such structure, the magnetization of these twoferromagnetic layers 1 b and 2 b included in the free layer 11 isstabilized, and hence, the magnetic field does not leak from the sideend surface of the layer, resulting in the improvement of the entirestability of the magnetoresistance effect element.

That is, according to the arrangement shown in FIG. 3B, sincemagnetostatic energy can he reduced, the magnetoresistance effectelement can provide sufficient strength to disturbance and ensure itsstable operation and function, thus being advantageous. In this exampleof arrangement, the non-magnetic layer 9 acts as a layer for regulatingthe degree of switched connection of these two ferromagnetic layers 1 band 2 b, and, for this purpose, is formed of a material selected fromthe group consisting of Ru, Rh, Ir, Cu, Ag or Au, or an alloy thereof.The material for forming the non-magnetic layer 9 may be formed of thesame material as that forming a non-magnetic layer 8 included in thepinned layer 12, described hereunder, thus being convenient at the timeof film formation.

The ferromagnetic layers 1 b and 2 b providing the anti-ferromagneticcoupling are generally formed from CoFe, NiFe or like so as to have athickness of about 0.5 to 5 nm. Furthermore, these ferromagnetic layers1, 2 and non-magnetic layer 9 are formed by sputtering or depositionprocess or treatment.

[Pinned Layer]

The pinned layer 12 is called “pin layer (pinned layer)” and is providedwith two (or at least two) ferromagnetic layers 5 and 6, which arearranged through the non-magnetic layer 8 disposed therebetween.

The ferromagnetic layers 5 and 6 forming the pinned layer 12 may beformed of various kinds of ferromagnetic materials having the spinpolarization of not less than 0.5, and CoFe, Co or like will be morepreferably utilized. In such case, these two ferromagnetic layers 5 and6 may be formed of the same material or materials different to eachother, and their thicknesses are also made equal to or different, fromeach other, generally, to about 2 to 10 nm. The difference of thesematerials may slightly affect on the film formation process, which,however, does not constitute so severe problem.

The non-magnetic layer 8 sandwiched between these ferromagnetic layers 5and 6 is formed of a material selected from the group consisting of Ru,Rh, Ir, Cu, Ag or Am, or alloy thereof so as to have a thickness, inusual, of about 0.5 to 3 nm.

These two ferromagnetic layers 5 and 6 are sectioned by the non-magneticlayer 8 so as to provide an arrangement in which the magnetization oflayers 5 and 6 are in the opposite directions. According to the functionof this non-magnetic layer 8, the magnetization of these twoferromagnetic layers 5 and 6 can be stabilized. As a result, since themagnetic field does not leak from the side end surface of the layerstructure, the stability of the entire structure of themagnetoresistance effect element can be improved. Further, theseferromagnetic layers 5 and 6 and non-magnetic layer 8 are formed bysputtering or deposition process or treatment.

[Anti-ferromagnetic Layer]

In the magnetoresistance effect element of the present invention, it isdesirable to locate an anti-ferromagnetic layer 7 on the pinned layer 12composed of the two ferromagnetic layers 5 and 6 so as to contact theferromagnetic layer 6.

It will be preferred that the anti-ferromagnetic layer 7 is formed of amaterial selected from the group consisting of PtMn, IrMn, PtPdMn andFeMn so as to have a thickness, of about 2 to 10 nm. According to thearrangement of such anti-ferromagnetic layer, exchange couplingconnection is induced, and the magnetization of the ferromagnetic pinnedlayer can be fixed. As a result, the magnetization of the pinned layer12 can be strongly fixed, so that the stability of the entire structureof the magnetoresistance effect element can be improved.

Here in above, although one embodiment of the magnetoresistance effectelement of the present invention is described with reference to FIGS. 1to 3, there may be provided modified embodiments such as shown in FIG. 4(FIGS. 4A and 4B). In magnetoresistance effect elements 10 a, 10 b ofthe modified embodiments, the free layers 11 a, 11 bare provided withferromagnetic layers 1 a, 2 a; 1 b, 2 b, respectively, which areinverted in the vertical position as compared with the embodiment ofFIG. 1, and also, the pinned layers 12 a; 12 b are provided withferromagnetic layers 5, 6, respectively, which are inverted in thevertical position as compared with the embodiment of FIG. 1.

According to these arrangements of FIGS. 4A and 4B, themagnetoresistance effect element having far improved sensitivity can beprovided, and moreover, the magnetic domain control can also be madeeasy.

In the magnetoresistance effect element obtainable by the presentinvention, although the ferromagnetic layers constituting the free layerand those constituting the pinned layer can be used as electrodes, otherelectrodes may be arranged independently from these ferromagneticlayers. Thus, the electric resistance between the free layer and thepinned layer obtained by the current conduction between these electrodeswill vary in accordance with the relative arrangement of themagnetizations thereof.

Furthermore, in the magnetoresistance effect element of the presentinvention, each of the ferromagnetic layers 2 and 5 sandwiching thenano-contact portion 13 has a flat surface in form of layer to easilycarry out the magnetic domain control, so that if is possible toproperly arrange the distribution of the magnetization. Accordingly, itbecomes possible to sharply maintain the magnetic wall width between theferromagnetic layers 2 and 5 opposing to each other through the finenano-contact portion 13 to thereby obtain the large magnetoresistanceratio. However, it is not always necessary for these two ferromagneticlayers 2 and 5 to provide a flat layer surface, and it may be possibleto provide a slightly rough surface or curved surface.

Furthermore, the present invention may include embodiments in which oneor plural nano-contact portions 13 are arranged, and in the case whereplural (more than one) nano-contact portions 13 are disposed between thefree layer and the pinned layer, the MR value may be slightly reduced,but, in comparison with the arrangement of the single nano-contactportion 13, the scattering of the MR values in each element could bereduced, thus easily reproducing the stable MR characteristics.

Still furthermore, in the magnetoresistance effect, element of thepresent invention, it is preferred that an angle constituted by thedirection of the magnetization of the ferromagnetic layer of the freelayer and the direction of the magnetization of the ferromagnetic layerof the pinned layer is 90 degrees or 180 degrees. According to suchangle arrangement, the sensitivity of the element can be improved andthe linear operation or function can be easily performed.

[Magnetic Head]

A magnetic head (magneto-resistive head) formed by utilizing themagnetoresistance effect element of the present invention of thestructures and characters mentioned above can provide a large reproducedsensitivity because, by utilizing such magnetoresistance effect element,the magnetoresistance ratio of more than 50% can be produced.

FIG. 5 is an illustrated example of an embodiment of the magnetic headutilizing the magnetoresistance effect element of the present inventionas a magnetic reproducing element.

With reference to FIG. 5, the magnetic head 50 of this embodimentcomprises: the magnetoresistance effect element 10 including the freelayer 11, the pinned layer 12, the nano-contact portion 13 sandwichedbetween these layers 11 and 12, and electrodes 51 and 52 disposedoutside the free layer 11 and the pinned layer 12, i.e., opposite to thenano-contact portion side; and shield members 53 and 54 both disposedfurther outside the electrodes 51 and 52. Reference numeral 55 shows aflow path of a sensing current.

In the magnetic head 50, the magnetoresistance effect element 10 isdisposed so that the film surface thereof has a vertical arrangementwith respect, to a recording medium 56. In the illustrated arrangement,the nano-contact portion 13 is arranged in a direction approaching therecording medium 56 from the center of the magnetoresistance effectelement 10. A magnetic field of a signal from the recording medium 56becomes large as shortening the distance from the recording medium 56,and accordingly, the magnetic head having the structure in which thenano-contact portion 13 is disposed to such position provides a largemagnetic field detection efficiency of the magnetic field of the freelayer 11 sensitive to the magnetization, thus being effective andadvantageous.

Furthermore, in the illustrated embodiment of FIG. 5, although ahorizontal magnetized film is illustrated as the recording medium 56, itmay be substituted with a vertical magnetized film.

FIG. 6 is an illustration, in an enlarged section, of one example of themagnetic head 50 viewed from the side of the recording medium 56,

With reference to FIG. 6, the magnetic head 50 is provided with themagnetoresistance effect element 10 at least including the free layer11, the pinned layer 12, and the nano-contact portion 13 sandwichedbetween these layers 11 and 12, which are of the structures andcharacters mentioned above with reference to FIGS. 1 to 4. Furthermore,the anti-ferromagnetic layer 7 is also disposed adjacent to the pinnedlayer 12, and the electrodes 51 and 52 are disposed on both outsides ofthe magnetoresistance effect element 10, Furthermore, in this embodimentof FIG. 6, a pair of permanent magnet layers 57 is additionally arrangedon both lateral sides.

For example, with reference to the magnetoresistance effect element 10shown, in FIG. 6, from the side of the recording medium, the laminationstructure thereof has arrangement of, in order from the lower side, thelower shield member 53, the electrode 51, the free layer 11,nano-contact portion 13 and non-magnetic layer 4, the pinned layer 12,the anti-ferromagnetic layer 7, the electrode 52 and the upper shieldmember 54. In addition, a pair of permanent magnet layers 57 formed ofCoPt is also disposed on both the lateral sides in the illustratedarrangement, and insulating layers 58 are also disposed around thepermanent electrodes 57.

The magnetoresistance effect element 10 of the embodiment shown in FIG.6 has a width of 20 to 100 nm thickness, and the respective layersconstituting this element 10 having a thickness in the range of 0.5 to20 nm may be optionally selected in accordance with the recordingdensity and the required sensitivity to be utilized. Furthermore, theone or more nano-contact portions may be formed so as to provide thethickness of 2 to 20 nm.

As mentioned above, according to the magnetoresistance effect elementmounted to the magnetic head of the present invention, the easy axis ofthe free layer arranged in opposition to the recording medium formed ofthe horizontal magnetic film provides a direction parallel to themagnetization direction of the recording medium, and the magnetizationof the easy axis is rotated in sensitive response to the magnetic fieldgenerated from the magnetization transition region of the recordingmedium. As a result, the sensing current passing the nano-contactportion varies and the leaking field of the recording medium can foeextremely sensitively read out. Moreover, the magnetoresistance effectelement can indicate the magnetoresistance effect, more than 50% anddetect the sensing current with high sensitivity, thus providing themagnetic head with reduced sensitivity loss and with improved stabilityin function.

It is to be noted that the present invention is not limited to thedescribed embodiment and many other changes and modifications may bemade without departing from the scopes of the appended claims.

1-16. (canceled)
 17. A magnetoresistance effect element comprising: afree layer composed of a ferromagnetic layer; a pinned layer composed ofa ferromagnetic layer; at least one nano-contact portion disposedbetween the free layer and the pinned layer, an insulating layer formedof an insulating material and disposed between the free layer and thepinned layer, said insulating layer and said nano-contact portionforming an intermediate layer between the free layer and the pinnedlayer; and a conductive layer disposed on at least one of a portionbetween the free layer and the intermediate layer including theinsulating layer and the nano-contact portion and a portion between thepinned layer and the intermediate layer including the insulating layerand the nano-contact portion wherein said nano-contact portion has adimension, including at least one of a length in the layer laminationdirection of the magnetoresistance effect element and a length in adirection normal to the layer lamination direction, being not more thana mean free path, and said nano-contact portion is provided, in aninside portion thereof, with a magnetic wall composed of one of a Blochmagnetic wall, a Neel magnetic wall and a combination wall thereof. 18.A magnetoresistance effect element according to claim 17, wherein saidmagnetic wall formed inside the nano-contact portion is the Blochmagnetic wall and a length, of the nano-contact portion in a layerlamination direction and a lattice constant “a” of a material formingthe nano-contact portion has a relationship “h<4×a”.
 19. Amagnetoresistance effect element according to claim 17, wherein saidmagnetic wall formed inside the nano-contact portion is the Neelmagnetic wall and a distance “h” of the nano-contact portion in thelamination direction and a lattice constant “a” of a material formingthe nano-contact portion has a relationship “h>20×a”.
 20. Amagnetoresistance effect element according to claim 17, wherein saidconductive layer has a thickness of 0.1 to 1.0 nm.
 21. A magnetic headcomprising: a magnetoresistance effect element having a laminationstructure; electrodes disposed on both sides of the lamination structureof the magnetoresistance effect element; a pair of shield membersdisposed on outside surfaces of the electrodes, respectively, saidmagnetoresistance effect element comprising: a free layer composed of aferromagnetic layer; a pinned layer composed of a ferromagnetic layer;and at least one nano-contact portion disposed between the free layerand the pinned layer, an insulating layer formed of an insulatingmaterial, and disposed between the free layer and the pinned layer, saidinsulating layer and said the nano-contact portion forming anintermediate layer between the free layer and the pinned layer; and aconductive layer disposed at least one of a portion between the freelayer and the intermediate layer including the insulating layer and thenano-contact portion and a portion between the pinned layer and theintermediate layer including the insulating layer and the nano-contactportion wherein said nano-contact portion has a dimension, including atleast one of a length in a layer lamination direction of themagnetoresistance effect element and a length in a direction normal tothe layer lamination direction, being not more than a mean free path andsaid nano-contact portion is provided, in an inside portion thereof,with a magnetic wall composed of one of a Bloch magnetic wall, a Neelmagnetic wall and a combination wall thereof.
 22. A magnetoresistanceeffect element according to claim 21, wherein said magnetic wall formedinside the nano-contact portion is the Bloch magnetic wall and a lengthof the nano-contact portion in a layer lamination direction and alattice constant “a” of a material forming the nano-contact portion hasa relationship “h<4×a”.
 23. A magnetoresistance effect element accordingto claim 21, wherein said magnetic wall formed inside the nano-contactportion is the Neel magnetic wall and a distance “h” of the nano-contactportion in the lamination direction and a lattice constant “a” of amaterial forming the nano-contact portion has a relationship “h>20×a”.24. A magnetoresistance effect element according to claim 21, whereinsaid conductive layer has a thickness of 0.1 and 1.0 nm.